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2N3325 - PNP germanium epitaxial transistors

Download the 2N3325 datasheet PDF. This datasheet also covers the 2N3323 variant, as both devices belong to the same pnp germanium epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3323-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3323 PNP germanium epitaxial transistors
2N3324 PNP germanium epitaxial transistors
2N3300 GENERAL PURPOSE TRANSISTOR
2N3301 GENERAL PURPOSE TRANSISTOR
2N3302 GENERAL PURPOSE TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3323 (GERMANIUM) 2N3324 2N3325 CASE 22 (TO-18) Collector connected·to cese MAXIMUM RATINGS PNP germanium epitaxial transistors for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications. Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCB VCES VEB 35 Vdc 35 Vdc 3.0 Vdc Collector Current Total Device Dissipation 25°C Case Temperature Derate Above 25 °C IC 100 mA Pn 300 mW 4.0 mW;oC Total Device Dissipation 25 °C Ambient Temperature Derate Above 25°C Po 150 mW 2.0 mW;aC Junction Temperature TJ +100 °c Storage Temperature Range Tstg -65 to +100 °c 35 30 25 II"""""", 1 '. , "'''''' G,INEUTRALIZ£D) 70 60 so i I POWER GAIN AND AC CURRENT GAIN versus FREIlUENCY 15 20 h,. ~ 15 .......