2N3712
2N3712 is NPN Transistor manufactured by Motorola Semiconductor.
2N3712 (SILICON)
NPN silicon annular transistor designed for highvoltage DC to VHF amplifier applications.
CASE 31
CTO-5) Collector connected to case
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA =25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
PD PD TJ, Tstg
Value
1.0 5.71 5.0 28.6 -65 to +200
Unit
Vdc
Vdc
Vdc m Adc watt m W;o C watts m W;o C
°c
2-558
2N3712 (continued)
ELECTRICAL CHARACTERISTICS (T, = 25'C unless otherw;se noted)
Characteristic
Symbol...
