2N3712 - NPN Transistor

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N3712
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	78.06 KB
Description	NPN Transistor
Datasheet	2N3712 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N3713	NPN silicon power transistors
2N3714	NPN silicon power transistors
2N3719	PNP Transistor
2N3720	PNP Transistor
2N3724	SWITCHING TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3712 (SILICON) NPN silicon annular transistor designed for highvoltage DC to VHF amplifier applications. CASE 31 CTO-5) Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TA =25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD PD TJ, Tstg Value 150 150 5.0 200 1.0 5.71 5.0 28.