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2N3960 - HIGH FREQUENCY TRANSISTOR

Download the 2N3960 datasheet PDF. This datasheet also covers the 2N3959 variant, as both devices belong to the same high frequency transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3959-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3961 NPN silicon RF Power transistors
2N3962 AMPLIFIER TRANSISTOR
2N3963 AMPLIFIER TRANSISTOR
2N3964 AMPLIFIER TRANSISTOR
2N3965 AMPLIFIER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (§ TA = 25°C Derate above 25°C Total Device Dissipation <& Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO vCBO vEBO PD Pd TJ. Tstg Value 12 20 4.5 400 2.3 750 4.3 -65 to +200 Unit Vdc Vdc Vdc mW mW/°C mW mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol Rtuc R &JA Max 0.233 0.436 Unit °C/mW °C/mW 2N3959 2N3960 JAN, JTX, JTXV AVAILABLE CASE 22-03, STYLE 1 TO-18 (TO-206AA) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.