2N3960
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation (- TA = 25°C
Derate above 25°C Total Device Dissipation <& Tq = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol v CEO v CBO v EBO
Pd
TJ. Tstg
Value 12 20 4.5 400 2.3 750 4.3
-65 to +200
Unit
Vdc
Vdc
Vdc m W m W/°C m W m W/°C
°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol Rtuc R &JA
Max
0.233 0.436
Unit
°C/m W °C/m W
2N3959 2N3960
JAN, JTX, JTXV AVAILABLE CASE 22-03, STYLE 1
TO-18 (TO-206AA)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic
Symbol Min Typ
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage OC = 10 m Adc, Bl = 0)
Collector-Base Breakdown Voltage d C = 10 /j Adc, Ie =...
