| Part number | 2N3962 |
|---|---|
| Datasheet | 2N3962-Motorola.pdf |
| File Size | 54.66 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | AMPLIFIER TRANSISTOR |
|
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Tstg 1.2 6.85 -65 to +200 Watts mW/°C °C (TA = 25°C unless otherwise noted. 2N3964 = 40 V) (VC E = 70 V) Collector Cutoff Current (Vce = 50 V) (VC £ = 70 V) (Vce = 40 v > (Vce = so.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N3962 | PNP SILICON TRANSISTOR | Micro Electronics |
| Solid State | 2N3962 | PNP Silicon Transistor | Solid State |
 |
2N3962 | Bipolar PNP Device | Seme LAB |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N3960 | HIGH FREQUENCY TRANSISTOR |
| 2N3961 | NPN silicon RF Power transistors |
| 2N3963 | AMPLIFIER TRANSISTOR |
| 2N3964 | AMPLIFIER TRANSISTOR |
| 2N3965 | AMPLIFIER TRANSISTOR |
| 2N3966 | HIGH-FREQUENCY AMPLIFIER JFET |
| 2N3902 | HIGH VOLTAGE NPN SILICON TRANSISTORS |
| 2N3903 | NPN Transistor |
| 2N3904 | NPN Transistor |
| 2N3905 | Transistors |
