This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N3960UB |
|---|---|
| Datasheet | 2N3960UB 2N3960 Datasheet (PDF) |
| File Size | 63.44 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | NPN SILICON SWITCHING TRANSISTOR |
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Derate linearly 2.3mW/°C above TA = +25°C (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10μAdc Collector-Base Cutoff Current VCB = 20Vdc Emitter-Base Cutoff Current VEB = 4.5Vdc Collector-Emitter Cutoff Current VCE = 10Vdc, VBE = 0.4Vdc VCE = 10Vdc, VBE = 2.0Vdc Symbol Min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N3960 | NPN Transistor | Semicoa Semiconductor |
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2N3960 | HIGH FREQUENCY TRANSISTOR | Motorola |
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N3960 | NPN SILICON SWITCHING TRANSISTOR |
| 2N3902 | NPN HIGH POWER SILICON TRANSISTOR |
| 2N3996 | NPN POWER SWITCHING SILICON TRANSISTOR |
| 2N3997 | NPN POWER SWITCHING SILICON TRANSISTOR |
| 2N3998 | NPN POWER SWITCHING SILICON TRANSISTOR |
| 2N3999 | NPN POWER SWITCHING SILICON TRANSISTOR |
| 2N3019 | LOW POWER NPN SILICON TRANSISTOR |
| 2N3019S | LOW POWER NPN SILICON TRANSISTOR |
| 2N3057A | LOW POWER NPN SILICON TRANSISTOR |
| 2N3419S | NPN MEDUIM POWER SILICON TRANSISTOR |
