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2N3960UB Datasheet

Manufacturer: Microsemi (now Microchip Technology)
2N3960UB datasheet preview

2N3960UB Details

Part number 2N3960UB
Datasheet 2N3960UB / 2N3960 Datasheet PDF (Download)
File Size 63.44 KB
Manufacturer Microsemi (now Microchip Technology)
Description NPN SILICON SWITCHING TRANSISTOR
2N3960UB page 2 2N3960UB page 3

2N3960UB Overview

Derate linearly 2.3mW/°C above TA = +25°C (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10μAdc Collector-Base Cutoff Current VCB = 20Vdc Emitter-Base Cutoff Current VEB = 4.5Vdc Collector-Emitter Cutoff Current VCE = 10Vdc, VBE = 0.4Vdc VCE = 10Vdc, VBE = 2.0Vdc Symbol Min.

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