2N3960
2N3960 is NPN SILICON SWITCHING TRANSISTOR manufactured by Microsemi.
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //.microsemi.
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/399
DEVICES
2N3960UB
LEVELS
JAN JANTX JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = +25°C Operating & Storage Junction Temperature Range
Symbol VCEO VCBO VEBO PT (1)
Top, Tstg
Value 12 20 4.5 0.4
-65 to +200
Unit Vdc Vdc Vdc W °C
Note: Derate linearly 2.3m W/°C above TA = +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage IC = 10μAdc
Collector-Base Cutoff Current VCB = 20Vdc
Emitter-Base Cutoff Current VEB = 4.5Vdc
Collector-Emitter Cutoff Current VCE = 10Vdc, VBE = 0.4Vdc VCE = 10Vdc, VBE = 2.0Vdc
Symbol
Min...
