Microsemi 2N3960
NPN SILICON SWITCHING TRANSISTOR
| Part No. | 2N3960 |
|---|---|
| Datasheet | 2N3960 Download |
| Manufacturer |  Microsemi |
| Description | NPN SILICON SWITCHING TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = +25°C Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO PT (1) Top, Tstg Value 12 20 4.5 0.4 -65 to +200 Unit Vdc Vdc Vdc W °C Note: Derate linearly 2.3mW/°C above TA = +25°CELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10μAdc Collector-Base Cutoff Current VCB = 20Vdc Emitter-Base Cutoff Current VEB = 4.5Vdc Collector-Emitter Cutoff Current VCE = 10Vdc, VBE = 0.4Vdc VCE = 10Vdc, VBE = 2.0Vdc Symbol Min
