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2N3960 - NPN Transistor

Key Features

  • General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases. Generic Part Number: 2N3960 REF: MIL-PRF-19500/399 TO-18 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation, TA = 25 C Derate above 25oC O.

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Datasheet Details

Part number 2N3960
Manufacturer Semicoa Semiconductor
File Size 43.68 KB
Description NPN Transistor
Datasheet download datasheet 2N3960 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet No. 2N3960 Type 2N3960 Geometry 0003 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases. Generic Part Number: 2N3960 REF: MIL-PRF-19500/399 TO-18 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation, TA = 25 C Derate above 25oC Operating Junction Temperature Storage Temperature o Symbol VCEO VCBO VEBO PT Rating 12 20 4.5 400 2.3 Unit V V V mW mW/oC o TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No.