Motorola 2N4072
NPN silicon annular transistors
| Part No. | 2N4072 |
|---|---|
| Datasheet | 2N4072 Download |
| Manufacturer |  Motorola |
| Description | NPN silicon annular transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector -Emitter Voltage Collector-Base Voltage . Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation @ TA =25°C Derate Above 25°C Total Device Dissipation @TC =25°C Derate above 25°C Operating Junction and Storage Temperature Range Symbol VCEO VCB VEB IC PD PD TJ , Tstg 2N4072 2N4073 20 40 4.0 100 150 0.35 - 2.0 - - 1.5 - 8.57 -65 to +200ELECTRICAL CHARACTERISTICS
(TA = 250 Cunless otherwise noted I Characteristic I I Symbol Min Typ Max STATIC CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 15 mAdc, IB =0) BVCEO(sus) 20 - - Collector-Base Breakdown Voltage (IC =0.1 mAdc, IE =0) BVCBO 40 - - Emitter-Base Breakdown Voltage (IE =O. 1 mAde, IC =0) BVEBO 4.0 - - Collector Cutoff Current (VCB =15 Vdc, IE = 0) (VCB =15 Vdc, IE = 0, TA =150°C) DC Current Gain (IC =25 mAdc, VCE =2 Vdc) ICBO - - 0.1 - - 100 ~E 10 - - DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (IC =25 mAdc, VCE =10 Vdc, f =100 MHz) fT - 550 - Output Capacita...