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2N4073 - NPN silicon annular transistors

Download the 2N4073 datasheet PDF. This datasheet also covers the 2N4072 variant, as both devices belong to the same npn silicon annular transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4072-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4072 (SILICON) 2N4073 NPN silicon annular transistors designed as amplifiers and drivers for large-signal VHF and UHF applications_ CASE 22 (TO-18) 2N4072 CASE 31 (TO-5) 2N4073 Collector connected to case MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector-Base Voltage . Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation @ TA =25°C Derate Above 25°C Total Device Dissipation @TC =25°C Derate above 25°C Operating Junction and Storage Temperature Range Symbol VCEO VCB VEB IC PD PD TJ , Tstg 2N4072 2N4073 20 40 4.0 100 150 0.35 - 2.0 - - 1.5 - 8.