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2N5108
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Emitter Voltage (Rbe = 10(7) Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a Tq = 25°C Derate above 25°C
Storage Temperature
Symbol vCEO VCER v CBO v EBO
•c
PD
Tstg
Value 30 55 55 3.0 0.4 3.5
0.02
- 65 to + 200
Unit Vdc Vdc Vdc Vdc Adc Watts
mW/°C
°C
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 5.0 mAdc, Rgg = 10 ohms)
Collector-Base Breakdown Voltage dC = 0.1 mAdc, Ig = 0)
Emitter-Base Breakdown Voltage (Ig = 0.
2N5108 Datasheet
