2N5109
JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Co Hector- Base Voltage
Emitter-Base Voltage
Base Current
- Collector Current Continuous
@Total Device Dissipation Tq = 75°C(1)
Derate above 25°C
VCEO VCBO v EBO
<B
"C
Storage Temperature
T stg
(1) Total Device Dissipation at T/ = 25°C is 1.0 Watt.
Value 20 40 3.0 400 400 2.5 20
-65 to +200
Unit Vdc Vdc Vdc m Adc m Adc
Watt m W/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) d C = 5.0 m Adc, Rfl E = 10 O)
Collector-Emitter Sustaining Voltage Oc = 5.0 m Adc, Ib = 0)
Collector Cutoff Current
(VCE = 15 Vdc, Bl = 0)
Collector Cutoff Current
(Vce = 15 Vdc, Vbe = -1.5 V, Tq = 150°C) (VC e = 35 Vdc, V BE = -1.5 V)
Emitter Cutoff Current (Vbe = 3.0 vdc, ic = o)
ON CHARACTERISTICS
DC Current Gain d C = 360 m Adc, V C e...
