Datasheet4U Logo Datasheet4U.com

2N5246 - HIGH-FREQUENCY AMPLIFIER JFET

This page provides the datasheet information for the 2N5246, a member of the 2N5245 HIGH-FREQUENCY AMPLIFIER JFET family.

📥 Download Datasheet

Datasheet preview – 2N5246

Datasheet Details

Part number 2N5246
Manufacturer Motorola
File Size 46.75 KB
Description HIGH-FREQUENCY AMPLIFIER JFET
Datasheet download datasheet 2N5246 Datasheet
Additional preview pages of the 2N5246 datasheet.

📁 Similar Datasheet

  • 2N5246 - N-Channel JFETs (National Semiconductor)
  • 2N5246 - N-CHANNEL RF Amplifier (Fairchild Semiconductor)
  • 2N524 - PNP Germanium Transistors (Central Semiconductor)
  • 2N5240 - (2N5239 / 2N5240) SILLCON N-P-N TRANSISTOR (ETC)
  • 2N5240 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2N5240 - NPN Power Silicon Transistor (MA-COM)
  • 2N5241 - Silicon NPN Power Transistors (SavantIC)
  • 2N5241 - Power Transistor (ETC)
  • 2N5245 - N-Channel JFETs (National Semiconductor)
  • 2N5245 - N-Channel RF Amplifier (Fairchild Semiconductor)
Other Datasheets by Motorola
  • 2N524 - PNP Transistor
  • 2N5245 - HIGH-FREQUENCY AMPLIFIER JFET
  • 2N5247 - HIGH-FREQUENCY AMPLIFIER JFET
  • 2N5209 - AMPLIFIER TRANSISTOR
  • 2N5210 - AMPLIFIER TRANSISTOR
  • 2N5227 - Amplifier Transistor
  • 2N5229 - LOW POWER CHOPPER TRANSISTOR
  • 2N5230 - LOW POWER CHOPPER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation TA = 25°C Derate above 25°C (Free Air) @Total Device Dissipation Tq = 25°C Derate above 25°C Lead Temperature (1/16" from Case for 10 Seconds) Storage Temperature Range Symbol VDG Vgs IQ PD Pd tl Tstg Value 30 -30 50 360 2.88 500 4.0 260 - 65 to + 1 50 Unit Vdc Vdc mA mW mW/°C mW mW/°C °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (lG = -1.
Published: |