• Part: 2N5247
  • Description: HIGH-FREQUENCY AMPLIFIER JFET
  • Manufacturer: Motorola Semiconductor
  • Size: 46.75 KB
Download 2N5247 Datasheet PDF
2N5247 page 2
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Datasheet Summary

MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation TA = 25°C Derate above 25°C (Free Air) @Total Device Dissipation Tq = 25°C Derate above 25°C Lead Temperature (1/16" from Case for 10 Seconds) Storage Temperature Range Symbol VDG Vgs Pd tl Tstg Value 30 -30 50 360 2.88 500 4.0 260 - 65 to + 1 50 Unit Vdc Vdc mA mW mW/°C mW mW/°C °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (lG = -1.0/^A, V DS = 0) Gate Reverse Current (VGS = -20V,VDS = 0) Gate 1 Leakage Current (VG1S = -20 V, V D S = 0, TA = 100°C) Gate Source Cutoff Voltage (Vqs = 15 V, Id...