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2N5247 - HIGH-FREQUENCY AMPLIFIER JFET

Download the 2N5247 datasheet PDF. This datasheet also covers the 2N5245 variant, as both devices belong to the same high-frequency amplifier jfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5245-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation TA = 25°C Derate above 25°C (Free Air) @Total Device Dissipation Tq = 25°C Derate above 25°C Lead Temperature (1/16" from Case for 10 Seconds) Storage Temperature Range Symbol VDG Vgs IQ PD Pd tl Tstg Value 30 -30 50 360 2.88 500 4.0 260 - 65 to + 1 50 Unit Vdc Vdc mA mW mW/°C mW mW/°C °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (lG = -1.