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·2N554 (GERMANIUM) 2N555
For Specifications, See 2N178 Data.
JAN 2N559-1 (GERMANIUM) JAN 2N559-2 JAN 2N559-3*
PNP germanium mesa transistors designed for military and industrial high-reliability, high-speed switching applications.
CASE 22
(TO-18)
Collector connected to case
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Emitter Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C Operating Junction Temperature Range Storage Temperature Range
VCES VCB VEB
IC IB IE
Po
Po
TJ Tstg
15 15 5.0 50 50 50 150 2.0 300 4.