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2N559-1 - PNP Transistor

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·2N554 (GERMANIUM) 2N555 For Specifications, See 2N178 Data. JAN 2N559-1 (GERMANIUM) JAN 2N559-2 JAN 2N559-3* PNP germanium mesa transistors designed for military and industrial high-reliability, high-speed switching applications. CASE 22 (TO-18) Collector connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Emitter Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range VCES VCB VEB IC IB IE Po Po TJ Tstg 15 15 5.0 50 50 50 150 2.0 300 4.