Datasheet4U Logo Datasheet4U.com

2N559-2 - PNP Transistor

Download the 2N559-2 datasheet PDF. This datasheet also covers the 2N559-1 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N559-1-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N5590 (2N5589 - 2N5591) RF And Microwave Transistors Microsemi Corporation
2N5590 (2N5589 - 2N5591) VHF Power Transistor SGS-Thomson
2N5591 (2N5589 - 2N5591) RF And Microwave Transistors Microsemi Corporation
2N5591 (2N5589 - 2N5591) VHF Power Transistor SGS-Thomson
2N5597 Bipolar PNP Device Seme LAB

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N559-1 PNP Transistor
2N559-3 PNP Transistor
2N554 PNP germanium power transistors
2N5541 Triacs
2N5542 Triacs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
·2N554 (GERMANIUM) 2N555 For Specifications, See 2N178 Data. JAN 2N559-1 (GERMANIUM) JAN 2N559-2 JAN 2N559-3* PNP germanium mesa transistors designed for military and industrial high-reliability, high-speed switching applications. CASE 22 (TO-18) Collector connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Emitter Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range VCES VCB VEB IC IB IE Po Po TJ Tstg 15 15 5.0 50 50 50 150 2.0 300 4.