2N5829 - HIGH FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N5829
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	342.11 KB
Description	HIGH FREQUENCY TRANSISTOR
Datasheet	2N5829 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4957 2N4958 2N4959 2N5829 2N4957 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO vCBO v EBO ic PD TJ' Tstg Value 30 30 3.0 30 200 1.14 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted] Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 1.