Datasheet Details
| Part number | 2N5822 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 317.64 KB |
| Description | COMPLEMENTARY SILICON TRANSISTOR |
| Datasheet | 2N5822-CentralSemiconductor.pdf |
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Overview: 2N5822 NPN 2N5823 PNP PLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i .
| Part number | 2N5822 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 317.64 KB |
| Description | COMPLEMENTARY SILICON TRANSISTOR |
| Datasheet | 2N5822-CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR 2N5822 and 2N5823 are epoxy molded plementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier applications where a high collector current rating is required.
TO-92-18R CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCES Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JA Thermal Resistance JC 70 70 60 5.0 750 1.0 625 1.5 -65 to +150 200 83.3 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=25V ICBO VCB=25V, TA=100°C IEBO VEB=5.0V BVCES IC=10μA 70 BVCEO IC=10mA 60 BVEBO IE=10μA 5.0 VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=2.0V, IC=500mA 0.6 hFE VCE=2.0V, IC=2.0mA 100 hFE VCE=2.0V, IC=500mA 25 fT VCE=2.0V, IC=50mA, f=20MHz 120 Cob VCB=10V, IC=0, f=1.0MHz Cib VEB=0.5V, IE=0, f=1.0MHz MAX 100 15 10 0.75 1.2 1.1 250 15 55 UNITS V V V V mA A mW W °C °C/W °C/W UNITS nA μA μA V V V V V V MHz pF pF R3 (6-March 2020) 2N5822 NPN 2N5823 PNP PLEMENTARY SILICON TRANSISTORS TO-92-18R CASE - MECHANICAL OUTLINE LEAD CODE: 1) Collector 2) Base 3) Emitter MARKING: FULL PART NUMBER w w w.
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5822 | COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS | Micro Electronics |
| Part Number | Description |
|---|---|
| 2N5823 | COMPLEMENTARY SILICON TRANSISTOR |
| 2N5814 | COMPLEMENTARY SILICON TRANSISTOR |
| 2N5815 | COMPLEMENTARY SILICON TRANSISTOR |
| 2N5816 | COMPLEMENTARY SILICON TRANSISTOR |
| 2N5817 | COMPLEMENTARY SILICON TRANSISTOR |
| 2N5818 | COMPLEMENTARY SILICON TRANSISTOR |
| 2N5819 | COMPLEMENTARY SILICON TRANSISTOR |
| 2N5856 | NPN Epoxy |
| 2N5859 | NPN SILICON SWITCHING TRANSISTOR |
| 2N5883 | COMPLEMENTARY SILICON POWER TRANSISTORS |