2N5822 Datasheet | Central Semiconductor

2N5822 NPN 2N5823 PNP PLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5822 and 2N5823 are epoxy molded plementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier applications where a high collector current rating is required. TO-92-18R CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCES Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JA Thermal Resistance JC 70 70 60 5.0 750 1.0 625 1.5 -65 to +150 200 83.3 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO VCB=25V ICBO...