2N5947
2N5947 is HIGH FREQUENCY TRANSISTOR manufactured by Motorola Semiconductor.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
- Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C Storage Temperature
Symbol VCEO VCBO v EBO ic
Tstg
Value 30 40 3.5 400 5.0
-65 to +200
Unit Vdc Vdc Vdc mAdc
Watts mW/°C
°C
CASE 244A-01, STYLE 1
TO-117 (TO-232AA)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (Ic = 20 mAdc, Ib = 0) Collector-Base Breakdown Voltage (Ic = 100 /uAdc, lg = 0) Emitter-Base Breakdown Voltage (lg .= 100 /- Adc, cl = 0) Collector Cutoff...
