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2N726 (SILICON) 2N727
PNP SILICON ANNULAR TRANSISTORS
· .. designed for general purpose audio amplifier applications.
• Co"ector·Emitter Breakdown Voltage -
= = BVCEO 20 Vdc (Min) @ IC 10 mAdc
• Low Output Capacitance Cob = 5.0 pI' (Max) @ VCB = 5.0 Vdc
PNPSILICON AMPLIFIER TRANSISTORS
!
·MAXIMUM RATINGS
Rating
Coliector·Emitter Voltage Coliector·Sase Voltage
I t:mitter·Sase Voltage
Collector CUrrent Continuous
Total Device Dissipation@TA = 25u C Derate above 25°C
Total Device Dissipation@Te=250C Derate !!bove 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO VCS VES Ie
Po
Po
TJ.Tstg
Valua
20 25
!l.U
50 300 2.0 1.0 6.67 -65 to +200
Unit
Vde Vde Vde mAde mW mW/oe
Watt mW/oC
°e
·Indicates JEDEC Registered Data
Pin 1. EMlttet
2. a...
3. ColI.ctar
0.