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2N726 - PNP SILICON ANNULAR TRANSISTORS

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2N726 (SILICON) 2N727 PNP SILICON ANNULAR TRANSISTORS · .. designed for general purpose audio amplifier applications. • Co"ector·Emitter Breakdown Voltage - = = BVCEO 20 Vdc (Min) @ IC 10 mAdc • Low Output Capacitance Cob = 5.0 pI' (Max) @ VCB = 5.0 Vdc PNPSILICON AMPLIFIER TRANSISTORS ! ·MAXIMUM RATINGS Rating Coliector·Emitter Voltage Coliector·Sase Voltage I t:mitter·Sase Voltage Collector CUrrent Continuous Total Device Dissipation@TA = 25u C Derate above 25°C Total Device Dissipation@Te=250C Derate !!bove 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCS VES Ie Po Po TJ.Tstg Valua 20 25 !l.U 50 300 2.0 1.0 6.67 -65 to +200 Unit Vde Vde Vde mAde mW mW/oe Watt mW/oC °e ·Indicates JEDEC Registered Data Pin 1. EMlttet 2. a... 3. ColI.ctar 0.