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2N727 - PNP SILICON ANNULAR TRANSISTORS

Download the 2N727 datasheet PDF. This datasheet also covers the 2N726 variant, as both devices belong to the same pnp silicon annular transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N726-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N726 (SILICON) 2N727 PNP SILICON ANNULAR TRANSISTORS · .. designed for general purpose audio amplifier applications. • Co"ector·Emitter Breakdown Voltage - = = BVCEO 20 Vdc (Min) @ IC 10 mAdc • Low Output Capacitance Cob = 5.0 pI' (Max) @ VCB = 5.0 Vdc PNPSILICON AMPLIFIER TRANSISTORS ! ·MAXIMUM RATINGS Rating Coliector·Emitter Voltage Coliector·Sase Voltage I t:mitter·Sase Voltage Collector CUrrent Continuous Total Device Dissipation@TA = 25u C Derate above 25°C Total Device Dissipation@Te=250C Derate !!bove 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCS VES Ie Po Po TJ.Tstg Valua 20 25 !l.U 50 300 2.0 1.0 6.67 -65 to +200 Unit Vde Vde Vde mAde mW mW/oe Watt mW/oC °e ·Indicates JEDEC Registered Data Pin 1. EMlttet 2. a... 3. ColI.ctar 0.