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2N963 - PNP germanium epitaxial mesa transistors

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2N960 SERIES (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic Output Capacitance (VCS = 10 Vde, ~ = 0, f = 1 MHz) Symbol Min Typ Max Unit Cob pF - 2.2 4.0 Emitter Transition Capacitance (VES = 1 Vde) Turn-On Time All Types (IC = 10 mAde, lSI =5 mAde, VSE(off) = 1. 25 Vde) (IC = 100 mAde, lSI = 5 mAde, VSE(off) = 1.25 Vde) Turn-Off Time (IC = 10 mAde, lSI = 1 mAde, Ia2 = 0.25 mAde) 2N960,2N961,2N964,2N965 2N962,2N966 (IC = 100 mAde, IBI = 5 mAde, IB2 = 1.25 mAde) 2N960,2N961,2N964,2N965 2N962,2N966 Rise Time Constant Hole Storage Factor Fall Time Constant Total Control Charge (IC = 10 mAde, IB = 1 mAde) (Ie = 100 mAde, IB = 5 mAde) . 2N960,2N961,2N964,2N965 2N9 62, 2N966 2N960, 2N961, 2N964, 2N965 2N962,2N966 C'!'e ton toff TRE K' s TFE ~ pF - 2.0 3.
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