Datasheet4U Logo Datasheet4U.com

2N964A - PNP germanium epitaxial mesa transistor

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N964 (GERMANIUM) For Specifications, See 2N960 Data. 2N964A (GERMANIUM) PNP germanium epitaxial mesa transistor for high- speed switching applications. CASE 22 (TO-18) Collector Connected to Case MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO 7.0 Vdc Collector-Base Voltage VCB 15 Vdc Emitter-Base Voltage VEB 2.5 Vdc Collector Current IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation@ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case PD 150 mW 2.0 mW/oC PD 300 mW 4.0 mW;oC TJ,Tstg -65 to +100 °c Symbol 8JC Max Unit 0.25 °C/mW Thermal Resistance, Case to Ambient 8CA 0.
Published: |