Motorola 2N968
PNP germanium mesa transistors
| Part No. | 2N968 |
|---|---|
| Datasheet | 2N968 Download |
| Manufacturer |  Motorola |
| Description | PNP germanium mesa transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Symbol 2N968 2N969 2N970 2N971 2N972 2N973 2N974 2N975 Unit VCES 15 12 12 7.0 Vdc Collector-Base Voltage VCB 15 12 12 7.0 Vdc Emitter-Base Voltage VEB 2.5 2.0 1. 25 1. 25 Vdc Total Device Dissipation @ TA =25°C PD Derate above 25°C Total Device Dissipation @ TC =25°C PD Derate above 25°C Operating and storage Junction Temperature Range TJ,Tstg 150 2.0 300 4.0 -65 to +100 mW mW/oC mW mw;oC °c 2-137 2N968 thru 2N975 (continued) NORMALIZED D.C. CURRENT GAIN versus COLLECTOR CURRENT 10 8 6 r-- VeE = 1 Vdc 2.0 1.0 0.8 0.6 0.4 ./ -./ !.---- -- + ? ~ +25°C_ l.----" _ 550 C ./ ~ 0.2 ) ......--V O. 1 0.1 0.2 0.5 1.0 ' 2.0 10 20 Ie. COLLECTOR CURRENT (mAde) 50 100 COLLECTOR SATURATION VOLTAGE versus AMBIENT TEMPERATURE g o.3 """ w §~! 0.25 ?Ic=12 ~ z )/ ";:: ~ ~ o. 2 ,,- V ~ 1 Ie = 10 mAd,7""'~ V B g 0.15 <.> V V ~ - ..~ - - I---llc/l,t lOl- ~ O. l 75-50 -25 0 +25 +50 + 75 + 100 T" AMBIENT TEMPERATURE (OC) CURRENT GAIN●BANDWIDTH PRODUCT (fT) versu...
