BC183 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC182/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC182,A,B BC183 BC184 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 182 50 60 BC 183 30 45 6.0 100 350 2.8 1.0 8.0 - 55 to +150 BC 184 30 45 Unit Vdc Vdc Vdc m Adc m W m W/°C Watts m W/°C °C 1 2 3 CASE 29- 04, STYLE 17 TO- 92 (TO- 226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 357 125 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 2.0 m A, IB = 0) V(BR)CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 V(BR)EBO ICBO BC182 BC183 BC184 IEBO - - - - 0.2 0.2 0.2 - 15 15 15 15 n A 60 45 45 6.0 - - - - - - - - V n A 50 30 30 - - - - - - V V Collector - Base Breakdown Voltage (IC = 10 m A, IE = 0) Emitter - Base Breakdown Voltage (IE = 100 m A, IC = 0) Collector Cutoff Current (VCB = 50 V, VBE = 0) (VCB = 30 V, VBE = 0) Emitter- Base Leakage Current (VEB = 4.0 V, IC = 0) Motorola Small- Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 BC182,A,B BC183...