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BC486 - HIGH CURRENT TRANSISTORS

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD pd Tj, T s tg Symbol R«jc R^jc BC BC BC 486 488 490 45 60 80 45 60 80 4.0 1.0 625 5.0 . 1.5 12 -55 to +150 Max 83.3 200 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C Unit °C/W °C/W BC486 BC488 BC490 CASE 29-02, STYLE 17 TO-92 (TO-226AA) HIGH CURRENT TRANSISTORS PNP SILICON Refer to MPSA55 for graphs.