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MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
— Collector Current Continuous
Symbol VCEO VCBO Vebo
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, Ta = 25°C
PD
Derate above 25°C
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
R 8JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 20 30 5.0 100
Max
350 2.8 150 357
Unit Vdc Vdc Vdc
mAdc
Unit
mW
rnWTC
°C
°C/W
BCW31,32,33
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage c (l = 2.
BCW31 Datasheet
