BCX55 Datasheet | Motorola Semiconductor

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current - Collector Current Continuous Symbol v CEO VCER v CBO VEBO "C BCX54 45 45 45 5.0 0.1 1.0 60 60 60 5.0 0.1 1.0 BCX56 80 100 100 5.0 0.1 1.0 Unit V V V V A A THERMAL CHARACTERISTICS Characteristic Symbol - Total Device Dissipation, Ta = 25°C Derate above 25°C Po Storage Temperature Tstg - Thermal Resistance Junction to Ambient Rej A - Package mounted on 99.5% alumina 10 x 12 x 0.6 mm. Max 1.0 . 8.0 150 125 Unit Watt m W/°C °C °C/W BCX54 BCX55 BCX56 CASE 345-01, STYLE 1 SOT-89 GENERAL PURPOSE TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 10 m A) c(l = 10 m A) c(l = 10 m A) Collector-Base Breakdown Voltage d C = 10 fi A C<I = 10 m A) d C = 10 n M Emitter-Base Breakdown Voltage E(l = 500 m A,...