BCX55 Datasheet PDF

MAXIMUM RATINGS

Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Symbol vCEO VCER vCBO VEBO IB "C BCX54 45 45 45 5.0 0.1 1.0 BCX55 60 60 60 5.0 0.1 1.0 BCX56 80 100 100 5.0 0.1 1.0 Unit V V V V A A THERMAL CHARACTERISTICS Characteristic Symbol
●Total Device Dissipation, Ta = 25°C Derate above 25°C Po Storage Temperature Tstg
●Thermal Resistance Junction to Ambient RejA
●Package mounted on 99.5% alumina 10 x 12 x 0.6 mm. Max 1.0 . 8.0 150 125 Unit Watt mW/°C °C °C/W BCX54 BCX55 BCX56 CASE 345-01, STYLE 1 SOT-89 GENERAL PURPOSE TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS

(Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 10 mA) c(l = 10 mA) c(l = 10 mA) Collector-Base Breakdown Voltage dC = 10 fiA C<I = 10 mA) dC = 10 nM Emitter-Base Breakdown Voltage E(l = 500 mA, Ib - 50 mA) E(l = 10 mA) (I