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BCX70G - Transistor

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BCX70G,H,J,K CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO v EBO "C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Symbol PD Storage Temperature Tstg 'Thermal Resistance Junction to Ambient R &JA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 2.0 mAdc, lg = 0) Emitter-Base Breakdown Voltage (IE = 1.0 MAdc, lc = 0) Collector Cutoff Current (Vqe = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (V£ B = 4.