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BCX70K - Transistor

Download the BCX70K datasheet PDF. This datasheet also covers the BCX70G variant, as both devices belong to the same transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BCX70G-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BCX70G,H,J,K CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO v EBO "C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Symbol PD Storage Temperature Tstg 'Thermal Resistance Junction to Ambient R &JA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 2.0 mAdc, lg = 0) Emitter-Base Breakdown Voltage (IE = 1.0 MAdc, lc = 0) Collector Cutoff Current (Vqe = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (V£ B = 4.