Motorola BDV64B
PNP Transistor
| Part No. | BDV64B |
|---|---|
| Datasheet | BDV64B Download |
| Manufacturer |  Motorola |
| Description | PNP Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB Value 100 100 5.0 10 20 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous — Peak Base Current 0.5 Total Device Dissipation @ TC = 25_C Derate above 25_C PD 125 1.0 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 . . . for use as output devices in complementary general purpose amplifier applications. _C CASE 340D–01 SOT 93, TO–218 TYPE THERMAL CHARACTERISTICS Characteristic Symbol θJC Max 1.0 Unit Thermal Resistance, Junction to Case _C/W 1.0 0.8 DERATING FACTOR 0.6 0.4 0.2 0 0 25 50 100 75 TC, CASE TEMPERATURE (°C) 125 150 Figure 1. Power Derating REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDV65B BDV64B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ...
