Motorola D45H10
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
| Part No. | D45H10 |
|---|---|
| Datasheet | D45H10 Download |
| Manufacturer |  Motorola |
| Description | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
MAXIMUM RATINGS
D44H or D45H Rating Symbol VCEO VEB IC 8 10, 11 80 Unit Vdc Vdc Adc Collector–Emitter Voltage Emitter Base Voltage 60 5.0 10 20 Collector Current — Continuous — Peak (1) Total Power Dissipation @ TC = 25_C @ TA = 25_C PD Watts 50 1.67 Operating and Storage Junction Temperature Range TJ, Tstg – 55 to 150 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS _C CASE 221A–06 TO–220AB THERMAL CHARACTERISTICS Characteristic Symbol RθJC RθJA TL Max 2.5 75 Unit Thermal Resistance, Junction to Case _C/W _C/W _C Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds 6.0 ms, Duty Cycle 50%. 275 (1) Pulse WidthELECTRICAL CHARACTERISTICS
(TJ = 25_C unless otherwise noted) Characteristic Symbol hFE Min 35 60 20 40 Max — — — — Unit — DC Current Gain (VCE = 1.0 Vdc, IC = 2.0 Adc) D44H10 D45H10 D44H8,11 D44H8,11 D44H10 D45H10 (VCE = 1.0 Vdc, IC = 4.0 Adc) D44H8,11 D45H8,11 Preferred devices are Motorola recommended choices for future use and best overall value. © Motorola, Inc.
