onsemi D45H10
Complementary Silicon Power Transistors
| Part No. | D45H10 |
|---|---|
| Datasheet | D45H10 Download |
| Manufacturer |  onsemi |
| Description | Complementary Silicon Power Transistors |
| Buy | Stock & Price |
FEATURES
● Low Collector−Emitter Saturation Voltage● Fast Switching Speeds
● Complementary Pairs Simplifies Designs
● Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage D44H8, D45H8 D44H11, D45H11 Emitter Base Voltage Collector Current − Continuous − Peak (Note 1) Total Power Dissipation @ TC = 25°C @ TA = 25°C Operating and Storage Junction Temperature Range Symbol VCEO 60 80 VEB IC 10 20 PD 70 2.0 TJ, Tstg −55 to +150 °C W 5.0 Vdc Adc Value Unit Vdc 10 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS 4 VCE(sat) = 1.0 V (Max) @ 8.0 A MARKING DIAGRAM 1 TO−220AB CASE 221A−09 STYLE 1 2 3 D4xHyyG AYWW D4xHyy = Device Code x = 4 or 5 yy = 8 or 11 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) Shipping † 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail 50...
