MAC15-4 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. - Blocking Voltage to 800 Volts - All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability - Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability - Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes (MAC15A Series) MAC15 Series MAC15A Series TRIACs 15 AMPERES RMS 200 thru 800 VOLTS MT2 G MT1 CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = - 40 to +125°C) MAC15-4, MAC15A4 MAC15-6, MAC15A6 MAC15-8, MAC15A8 MAC15-10, MAC15A10 VGM IT(RMS) I2t ITSM Symbol VDRM 200 400 600 800 10 15 93 150 Volts Amps A2s Amps Value Unit Volts Peak Gate Voltage On-State Current RMS Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C) Circuit Fusing (t = 8.3 ms) Peak Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Preceded and followed by rated current Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Current Operating Junction Temperature Range Storage Temperature Range PGM PG(AV) IGM TJ Tstg 20 0.5 2 - 40 to +125 - 40 to +150 Watts Watt Amps °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2 Unit °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV 1 Motorola Thyristor Device Data 3-...