Datasheet4U Logo Datasheet4U.com

MBD110DWT1 - Dual Schottky Barrier Diodes

Key Features

  • .004 0.012 0.026 BSC.
  • 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MBD110DWT1 Dual SCHOTTKY Barrier Diodes Leshan Radio Company
MBD110DWT1 Dual Schottky Barrier Diodes ON Semiconductor
MBD110DWT1G Dual Schottky Barrier Diodes ON Semiconductor
MBD101 Schottky Barrier Diodes ON Semiconductor
MBD101G Schottky Barrier Diodes ON Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MBD101 SILICON SCHOTTKY BARRIER DIODES
MBD101LT1 SILICON SCHOTTKY BARRIER DIODES
MBD301 30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES
MBD330DWT1 Dual Schottky Barrier Diodes
MBD54DWT1 30 VOLTS DUAL HOT.CARRIER DETECTOR AND SWITCHING DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD110DWT1/D Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six–leaded package. The SOT–363 is ideal for low–power surface mount applications where board space is at a premium, such as portable products. Surface Mount Comparisons: SOT–363 Area (mm2) Max Package PD (mW) Device Count 4.6 120 2 SOT–23 7.