MBR2515L Datasheet Switchmode Power Rectifier

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR2515L/D Advance Information SWITCHMODE™ Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode.

Datasheet Details

Part number	MBR2515L
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	47.21 KB
Description	SWITCHMODE Power Rectifier
Datasheet	MBR2515L_MotorolaInc.pdf

Key Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, low voltage converters, OR’ing diodes, and polarity protection devices.
Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 70°C).
Guardring for Stress Protection.
Highly Stable Oxide Passivated Junction (100°C Operating Junction Temperature).
Epoxy Meets UL94, VO at 1/8″ Mechanical Characteristics.

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