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MBR2515L - SWITCHMODE Power Rectifier

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, low voltage converters, OR’ing diodes, and polarity protection devices.
  • Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 70°C).
  • Guardring for Stress Protection.
  • Highly Stable Oxide Passivated Junction (100°C Operating Junction Temperature).
  • Epoxy Meets UL94, VO at 1/8″ Mechanical Characteristics.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR2515L/D Advance Information SWITCHMODE™ Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, low voltage converters, OR’ing diodes, and polarity protection devices. • Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 70°C) • Guardring for Stress Protection • Highly Stable Oxide Passivated Junction (100°C Operating Junction Temperature) • Epoxy Meets UL94, VO at 1/8″ Mechanical Characteristics • Case: Epoxy, Molded • Weight: 1.