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MBRD1035CTL - SWITCHMODE Schottky Rectifier

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
  • Highly Stable Oxide Passivated Junction Guardring for Stress Protection Matched dual die construction.
  • May be Paralleled for High Current Output High dv/dt Capability Short Heat Sink Tap Manufactured.
  • Not Sheared V.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MBRD320 SWITCHMODE Power Rectifirers
MBRD330 SWITCHMODE Power Rectifirers
MBRD340 SWITCHMODE Power Rectifirers
MBRD350 SWITCHMODE Power Rectifirers
MBRD360 SWITCHMODE Power Rectifirers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRD1035CTL/D Advance Information SWITCHMODE™ Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.