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MBRF2060CT - SWITCHMODE Schottky Power Rectifirer

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low.
  • voltage, high.
  • frequency switching power supplies, free wheeling diodes and polarity protection diodes.
  • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MBRF2060 SWITCHMODE Schottky Power Rectifirer
MBRF20100 SWITCHMODE Schottky Power Rectifirers
MBRF20100CT SWITCHMODE Schottky Power Rectifirers
MBRF20200CT SWITCHMODE Schottky Power Rectifirer
MBRF2045CT SWITCHMODE Schottky Power Rectifirer

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF2060CT/D SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency switching power supplies, free wheeling diodes and polarity protection diodes.