MFE825
MFE825 is manufactured by Motorola Semiconductor.
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@Total Device Dissipation T"a = 25°C
Derate above 25°C Junction Temperature Range Operating and Storage Junction
Temperature Range
Symbol vDs Vgs id
Pd
Tj TJ- Tstg
Value 20 30 25 200
1.6 150
- 65 to + 1 50
Unit
Vdc Vdc mA mW mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Drain-Source Breakdown Voltage
(ID =1.0 /iA, Vqs = -8.0 V)
Gate Reverse Current
(Vgs = -iov,vDS
V)
Gate Source Voltage dp = 1.0 mA, VDS = 2.0 V) ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(Vps = io v, vG s = o)
SMALL-SIGNAL CHARACTERISTICS...
