MGP11N60E Description
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP11N60E/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short...