MGP11N60ED datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MGP11N60ED |
|---|---|
| Datasheet | MGP11N60ED-Motorola.pdf |
| File Size | 130.62 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | Insulated Gate Bipolar Transistor |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Its new 600 V IGBT technology is specifically...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MGP11N60E | Insulated Gate Bipolar Transistor |
| MGP14N60E | Insulated Gate Bipolar Transistor |
| MGP15N38CL | Internally Clamped N-Channel IGBT |
| MGP15N43CL | Internally Clamped N-Channel IGBT |
| MGP15N60U | Insulated Gate Bipolar Transistor |
| MGP20N14CL | Internally Clamped / N-Channel IGBT |
| MGP20N35CL | SMARTDISCRETES Internally Clamped / N-Channel IGBT |
| MGP20N40CL | SMARTDISCRETES Internally Clamped / N-Channel IGBT |
| MGP20N60U | Insulated Gate Bipolar Transistor |
| MGP21N60E | Insulated Gate Bipolar Transistor |
