MGS05N60D Datasheet | Motorola Semiconductor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS05N60D/D Insulated Gate Bipolar Transistor N- Channel Enhancement- Mode Silicon Gate This IGBT contains a built- in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. Built- In Free Wheeling Diode Built- In Gate Protection Zener Diode Industry Standard Package (TO92 - 1.0 Watt) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms - Robust High Voltage Termination - Robust Turn- Off SOA ™ Data Sheet POWERLUX IGBT 0.5 A @ 25°C 600 V - - - - CASE 029- 05 TO- 226AE TO92 (1.0 WATT) MAXIMUM...