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MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGS05N60D/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. Built–In Free Wheeling Diode Built–In Gate Protection Zener Diode Industry Standard Package (TO92 — 1.0 Watt) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms • Robust High Voltage Termination • Robust Turn–Off SOA
C
™ Data Sheet
MGS05N60D
POWERLUX IGBT 0.5 A @ 25°C 600 V
• • • •
E C G
G
E
CASE 029–05 TO–226AE TO92 (1.
MGS05N60D Datasheet
