MGS05N60D datasheet by ON.
| Part number | MGS05N60D |
|---|---|
| Datasheet | MGS05N60D_ONSemiconductor.pdf |
| File Size | 138.74 KB |
| Manufacturer | ON |
| Description | Insulated Gate Bipolar Transistor |
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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS05N60D/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT contains a built in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts.
View MGS05N60D datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MGS05N60D | Insulated Gate Bipolar Transistor | Motorola |
| Part Number | Description |
|---|---|
| MGS13002D | Insulated Gate Bipolar Transistor |
| MGSF1N02LT1 | Power MOSFET 750 mAmps / 20 Volts |
| MGSF1N02LT3 | Power MOSFET 750 mAmps / 20 Volts |
