MGS13002D Description
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS13002D/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT contains a built in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. Built In Free Wheeling Diode Built In Gate Protection Zener Diode Industry Standard Package (TO92...