MGS13002D
MGS13002D is Insulated Gate Bipolar Transistor manufactured by onsemi.
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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Insulated Gate Bipolar Transistor
N- Channel Enhancement- Mode Silicon Gate
This IGBT contains a built- in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. Built- In Free Wheeling Diodes Built- In Gate Protection Zener Diode Industry Standard Package (TO92
- 1.0 Watt) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms
- Robust High Voltage Termination
- Robust Turn- Off SOA
™ Data Sheet
IGBT 0.5 A @ 25°C 600 V
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