| Part number | MGSF3441VT1 |
|---|---|
| Datasheet | MGSF3441VT1-Motorola.pdf |
| File Size | 92.12 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS Single P-Channel FET |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Preliminary Information Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy conserving traits. ™ These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device 1256 DRAIN ideal for use...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MGSF3441XT1 | TMOS Single P-Channel FET |
| MGSF3442VT1 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF3442XT1 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF3454VT1 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF3454XT1 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF3455V | TMOS Single P-Channel Field Effect Transistors |
| MGSF3455VT1 | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF3455XT1 | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF1N02EL | N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF1N02ELT1 | N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET |
