MGW20N120 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MGW20N120 |
|---|---|
| Datasheet | MGW20N120_MotorolaInc.pdf |
| File Size | 104.86 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | Insulated Gate Bipolar Transistor |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Designer’s™ Data Sheet Insulated Gate Bipolar Transistor N−Channel Enhancement−Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage−blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short...
View MGW20N120 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MGW20N120 | Insulated Gate Bipolar Transistor | ON |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MGW20N60D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGW21N60ED | Insulated Gate Bipolar Transistor |
| MGW12N120 | Insulated Gate Bipolar Transistor |
| MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGW30N60 | Insulated Gate Bipolar Transistor |
