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MGW20N120 - Insulated Gate Bipolar Transistor

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Datasheet Details

Part number MGW20N120
Manufacturer Motorola
File Size 104.86 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet MGW20N120 Datasheet
Additional preview pages of the MGW20N120 datasheet.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Designer’s™ Data Sheet Insulated Gate Bipolar Transistor N−Channel Enhancement−Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage−blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies.
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