MGW20N120 Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Designer’s™ Data Sheet Insulated Gate Bipolar Transistor N−Channel Enhancement−Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage−blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short...