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MGW20N120 - Insulated Gate Bipolar Transistor

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Datasheet Details

Part number MGW20N120
Manufacturer ON
File Size 139.30 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet MGW20N120 Datasheet
Additional preview pages of the MGW20N120 datasheet.

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Full PDF Text Transcription

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies.
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