MGW21N60ED datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MGW21N60ED |
|---|---|
| Datasheet | MGW21N60ED_MotorolaInc.pdf |
| File Size | 152.76 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | Insulated Gate Bipolar Transistor |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Preliminary Data Sheet Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Its new 600V IGBT technology is...
View MGW21N60ED datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MGW21N60ED | Insulated Gate Bipolar Transistor | ON |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MGW20N120 | Insulated Gate Bipolar Transistor |
| MGW20N60D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGW12N120 | Insulated Gate Bipolar Transistor |
| MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGW30N60 | Insulated Gate Bipolar Transistor |
