MGW21N60ED Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Preliminary Data Sheet Insulated Gate Bipolar Transistor N- Channel Enhancement- Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co- packaged with a soft recovery ultra- fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage- blocking capability. Its new 600V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co- packaged IGBTs save space, reduce assembly time and cost. This new E- series introduces an energy efficient, ESD protected, and rugged short circuit device. - Industry Standard TO- 247 Package - High Speed: Eoff = 65 m J/A typical at 125°C - High Voltage Short Circuit Capability - 10 ms minimum at 125°C, 400 V - Low On- Voltage - 2.1 V typical at 20 A, 125°C - Soft Recovery Free Wheeling Diode is included in the Package - Robust High Voltage Termination - ESD Protection Gate- Emitter Zener Diodes IGBT IN TO- 247 21 A @ 90°C 31 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED ON- VOLTAGE CASE 340K- 01, TO- 247 AE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector- Emitter Voltage Collector- Gate Voltage (RGE = 1.0 MΩ) Gate- Emitter Voltage - Continuous Collector Current - Continuous @ TC = 25°C Collector Current - Continuous @ TC = 90°C Collector Current - Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance - Junction to Case - IGBT Thermal Resistance - Junction to Diode Thermal Resistance - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6- 32 or M3 screw (1) Pulse...