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MGW21N60ED - Insulated Gate Bipolar Transistor

Features

  • 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 STYLE 4: PIN 1. 2. 3. 4. INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 A K P.
  • Y.
  • V F D 0.25 (0.010) M H J G DIM A B C D E F G H J K L P Q R U V Y Q S GATE.

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Datasheet Details

Part number MGW21N60ED
Manufacturer ON
File Size 152.62 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet MGW21N60ED Datasheet
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Full PDF Text Transcription

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. This new E–series introduces an energy efficient, ESD protected, and rugged short circuit device.
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