MHW8222 Datasheet | Motorola Semiconductor

feature ion- implanted, arsenic emitter transistors and an all gold metallization system. - Specified for 110/128- Channel Performance - Broadband Power Gain - @ f = 40 - 860 MHz Gp = 22 d B Typ @ 750 and 860 MHz - Broadband Noise Figure NF = 5.5 d B Typ - MHW7222 NF = 6.4 d B Typ - MHW8222 - Superior Gain, Return Loss and DC Current Stability with Temperature - All Gold Metallization MHW7222 MHW8222 22 d B GAIN 750/860 MHz 110/128 CHANNEL CATV AMPLIFIERS CASE 714- 06, STYLE 1 ABSOLUTE MAXIMUM RATINGS Rating DC Supply Voltage RF Input Voltage (Single Tone) Operating Case Temperature Range Storage Temperature Range Symbol VCC Vin TC Tstg Value + 28 + 70 - 20 to +100 - 40 to +100 Unit Vdc d Bm V °C °C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = + 30°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Power Gain f = 50 MHz f = 750 MHz f = 860 MHz MHW7222 MHW8222 All MHW7222 MHW8222 MHW7222, MHW8222 MHW7222 MHW8222 MHW7222, MHW8222 MHW7222 MHW8222 MHW7222 MHW8222 Symbol BW Gp Min 40 40 20.8 22 21.8 0 - - 20 - - - - Typ - - 21.5 22.3 22.3 1 0.4 0.4 24 - - - 63 - 63 Max 750 860 22.2 24 24 2 0.6 0.8 - 0.008 0.009 - 55 - 56 (continued) Unit MHz d B Slope (f = 40 - 750 MHz) Gain Flatness (Peak To Valley) (f = 40 - 750 MHz) Input/Output Return Loss @ f = 40 MHz Derate Return Loss @ f > 40 MHz posite Second Order (Vout = + 40 d Bm V/ch; 110 Channels) (Vout = + 38 d Bm V/ch; 128 Channels) S Gf IRL/ORL RLD - - d B d B/MHz d B CSO110 CSO128 REV 1 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 MHW7222 MHW8222 1 ELECTRICAL CHARACTERISTICS -...